让分胜负成蓝彩主力军|nba让分胜负推荐
  • 半導體學報(英文版) , 2014,Vol.35(4)
  • National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
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DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

Song Xubo   Gu Guodong   Dun Shaobo   Lü Yuanjie   Han Tingting   Wang Yuangang   Xu Peng  

National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China   National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China   National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China   National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China   National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China   National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China   National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China  

Abstract:

Keywords:

让分胜负成蓝彩主力军